Improvement in R off/R on ratio and reset current via combining compliance current with multilayer structure in tantalum oxide-based RRAM
Crossref DOI link: https://doi.org/10.1007/s00339-015-9170-8
Published Online: 2015-04-21
Published Print: 2015-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chen, Xiaorong
Feng, Jie
Text and Data Mining valid from 2015-04-21
