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Peculiarities of photoluminescence of vertical n +/n-GaAs/Al0.25Ga0.75As MBE- and MOCVD-grown structures designed for microwave detectors

Crossref DOI link: https://doi.org/10.1007/s00339-015-9292-z

Published Online: 2015-06-26

Published Print: 2015-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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