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Spectral properties of a lateral p–n homojunction-structured visible silicon light-emitting diode fabricated by dressed-photon–phonon-assisted annealing

Crossref DOI link: https://doi.org/10.1007/s00339-015-9432-5

Published Online: 2015-08-21

Published Print: 2015-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Yamaguchi, M.

Kawazoe, T.

Yatsui, T.

Ohtsu, M.
Funding

Funding for this research was provided by:

Ministry of Education, Culture, Sports, Science, and Technology (26286022)

Ministry of Education, Culture, Sports, Science, and Technology (26630122)

Japan Society for the Promotion of Science (Core-to-Core Program)
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Text and Data Mining valid from 2015-08-21

Version of Record valid from 2015-08-21
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Article History

Received: 30 June 2015

Accepted: 10 August 2015

First Online: 21 August 2015

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