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Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes

Crossref DOI link: https://doi.org/10.1007/s00339-015-9504-6

Published Online: 2015-09-29

Published Print: 2015-11

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Zhao, Jingtao

Lin, Zhaojun

Chen, Quanyou

Yang, Ming

Cui, Peng

Lv, Yuanjie

Feng, Zhihong
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (11174182, 61306113)

Specialized Research Fund for the Doctoral Program of Higher Education (20110131110005)
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