Improving gate delay and I ON/I OFF in nanoscale heterostructure field effect diode (H-FED) by using heavy doped layers in the channel
Crossref DOI link: https://doi.org/10.1007/s00339-016-0009-8
Published Online: 2016-03-30
Published Print: 2016-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Vadizadeh, Mahdi
Text and Data Mining valid from 2016-03-30
