Electrical properties and transport mechanisms of Au/Ba0.6Sr0.4TiO3/GaN metal–insulator–semiconductor (MIS) diode at high temperature range
Crossref DOI link: https://doi.org/10.1007/s00339-016-0047-2
Published Online: 2016-04-14
Published Print: 2016-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Rajagopal Reddy, V.
Text and Data Mining valid from 2016-04-14