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Dislocation density investigation on MOCVD-grown GaN epitaxial layers using wet and dry defect selective etching

Crossref DOI link: https://doi.org/10.1007/s00339-016-0143-3

Published Online: 2016-05-24

Published Print: 2016-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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