Erratum to: Progress of p-channel bottom-gate poly-Si thin-film transistor by nickel silicide seed-induced lateral crystallization
Crossref DOI link: https://doi.org/10.1007/s00339-016-0176-7
Published Online: 2016-06-14
Published Print: 2016-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lee, Sol Kyu
Seok, Ki Hwan
Park, Jae Hyo
Kim, Hyung Yoon
Chae, Hee Jae
Jang, Gil Su
Lee, Yong Hee
Han, Ji Su
Joo, Seung Ki
License valid from 2016-06-14