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Device characteristics of amorphous ZnSnLiO thin film transistors with various channel layer thicknesses

Crossref DOI link: https://doi.org/10.1007/s00339-016-0268-4

Published Online: 2016-07-22

Published Print: 2016-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Wang, Hailong

Li, Bin

Zhang, Wenqi

Wu, Huaihao

Zhou, Dongzhan

Yao, Zhigang

Yi, Lixin

Zhang, Xiqing

Wang, Yongsheng
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (51372016, 61275022)

Fundamental Research Funds for the Central Universities (2015JBM100)
License Information

License valid from 2016-07-22