Improved performance of N-face AlGaN-based deep ultraviolet light-emitting diodes with superlattice electron blocking layer
Crossref DOI link: https://doi.org/10.1007/s00339-016-0310-6
Published Online: 2016-08-01
Published Print: 2016-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Xie, F.
Wang, F. X.
License valid from 2016-08-01
