Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films
Crossref DOI link: https://doi.org/10.1007/s00339-016-0326-y
Published Online: 2016-08-06
Published Print: 2016-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Qiu, X. Y.
Zhang, S. Y.
Zhang, T.
Wang, R. X.
Li, L. T.
Zhang, Y.
Dai, J. Y.
Funding for this research was provided by:
the National Natural Science Foundation of China (11274257)
License valid from 2016-08-06