Conduction mechanism and dielectric properties of a Se80Ge20−x Cd x (x = 0, 6 and 12 at.wt%) films
Crossref DOI link: https://doi.org/10.1007/s00339-016-0375-2
Published Online: 2016-08-26
Published Print: 2016-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Shakra, A. M.
Farid, A. S.
Hegab, N. A.
Afifi, M. A.
Alrebati, A. M.
License valid from 2016-08-26