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Surface etching mechanism of carbon-doped Ge2Sb2Te5 phase change material in fluorocarbon plasma

Crossref DOI link: https://doi.org/10.1007/s00339-016-0381-4

Published Online: 2016-09-01

Published Print: 2016-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Shen, Lanlan

Song, Sannian

Song, Zhitang

Li, Le

Guo, Tianqi

Cheng, Yan

Lv, Shilong

Wu, Liangcai

Liu, Bo

Feng, Songlin
Funding

Funding for this research was provided by:

"Strategic Priority Research Program" of the Chinese Academy of Sciences (XDA09020402)

National Integrate Circuit Research Program of China (2009ZX02023-003, 61261160500)

National Natural Science Foundation of China (61376006, 61401444, 61504157)

Science and Technology Council of Shanghai (13ZR1447200, 14DZ2294900, 14ZR1447500, 15DZ2270900)
License Information

License valid from 2016-09-01