Structural, electrical, band alignment and charge trapping analysis of nitrogen-annealed Pt/HfO2/p-Si (100) MIS devices
Crossref DOI link: https://doi.org/10.1007/s00339-016-0569-7
Published Online: 2016-11-17
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kumar, Arvind
Mondal, Sandip
Rao, K. S. R. Koteswara
License valid from 2016-11-17