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Deep ultraviolet photodetectors based on p-Si/i-SiC/n-Ga2O3 heterojunction by inserting thin SiC barrier layer

Crossref DOI link: https://doi.org/10.1007/s00339-016-0576-8

Published Online: 2016-11-21

Published Print: 2016-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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