Crossmark

Efficient red-emission InGaN/GaN multilayered structure on Si with surface-nitrified HfO2 film as buffer layer

Crossref DOI link: https://doi.org/10.1007/s00339-016-9746-y

Published Online: 2016-02-24

Published Print: 2016-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Zhang, Wei

Zhang, Xuehua

Wang, Yongjin

Hane, K.

Hu, Fangren
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (NSFC) (61274121)

Jiangsu Province NSFC (BK2012829, BK20150842, BK20150850)

The talent project of Nanjing University of Posts and Telecommunications (NY212007, NY214161, NY214011)
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