Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices
Crossref DOI link: https://doi.org/10.1007/s00339-016-9768-5
Published Online: 2016-03-01
Published Print: 2016-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chen, Kai-Huang
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Liao, Kuo-Hsiao
Syu, Yong-En
Sze, Simon M.
Text and Data Mining valid from 2016-03-01