Erratum to: Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors
Crossref DOI link: https://doi.org/10.1007/s00339-017-0898-1
Published Online: 2017-04-20
Published Print: 2017-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tongbram, B.
Shetty, S.
Ghadi, H.
Adhikary, S.
Chakrabarti, S.
License valid from 2017-04-20