Electric and photoelectric properties of n-AgInSe2/p-Si heterojunction diode fabricated by successive layer deposition
Crossref DOI link: https://doi.org/10.1007/s00339-017-1205-x
Published Online: 2017-08-22
Published Print: 2017-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kaleli, Murat https://orcid.org/0000-0002-3290-2020
Aldemir, Durmuş Ali
Parlak, Mehmet
License valid from 2017-08-22
