Dependences of emission intensity of Si light-emitting diodes on dressed-photon–phonon-assisted annealing conditions and driving current
Crossref DOI link: https://doi.org/10.1007/s00339-017-1215-8
Published Online: 2017-08-31
Published Print: 2017-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Jun Hyoung
Kawazoe, Tadashi
Ohtsu, Motoichi
License valid from 2017-08-31
