Effect of interfacial SiO2−y layer and defect in HfO2−x film on flat-band voltage of HfO2−x/SiO2−y stacks for backside-illuminated CMOS image sensors
Crossref DOI link: https://doi.org/10.1007/s00339-018-1659-5
Published Online: 2018-02-20
Published Print: 2018-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Na, Heedo
Lee, Jimin
Jeong, Juyoung
Kim, Taeho
Sohn, Hyunchul http://orcid.org/0000-0002-5824-8493
Text and Data Mining valid from 2018-02-20
Article History
Received: 8 August 2017
Accepted: 7 February 2018
First Online: 20 February 2018