A novel approach for the improvement of electrostatic behaviour of physically doped TFET using plasma formation and shortening of gate electrode with hetero-gate dielectric
Crossref DOI link: https://doi.org/10.1007/s00339-018-1670-x
Published Online: 2018-03-13
Published Print: 2018-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Soni, Deepak http://orcid.org/0000-0002-5127-3477
Sharma, Dheeraj
Aslam, Mohd.
Yadav, Shivendra
Text and Data Mining valid from 2018-03-13
Article History
Received: 12 August 2017
Accepted: 9 February 2018
First Online: 13 March 2018