Frequency- and doping-level influence on electric and dielectric properties of PolySi/SiO2/cSi (MOS) structures
Crossref DOI link: https://doi.org/10.1007/s00339-018-1684-4
Published Online: 2018-02-23
Published Print: 2018-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Doukhane, N.
Birouk, B.
Text and Data Mining valid from 2018-02-23
Article History
Received: 27 August 2017
Accepted: 14 February 2018
First Online: 23 February 2018