Memory improvement in lead-free BiFeO3 ferroelectric with high-k Al2O3 buffer layer for non-volatile memory applications
Crossref DOI link: https://doi.org/10.1007/s00339-018-1926-5
Published Online: 2018-06-26
Published Print: 2018-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Pandey, Kamal Prakash
Text and Data Mining valid from 2018-06-26
Article History
Received: 22 February 2018
Accepted: 18 June 2018
First Online: 26 June 2018