Preparation of n-ZnO/p-Si heterojunction photodetector via rapid thermal oxidation technique: effect of oxidation time
Crossref DOI link: https://doi.org/10.1007/s00339-018-1946-1
Published Online: 2018-07-07
Published Print: 2018-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ismail, Raid A.
Al-Samarai, Abdul-Majeed E.
Mohammed, Walla M.
Text and Data Mining valid from 2018-07-07
Article History
Received: 25 May 2018
Accepted: 27 June 2018
First Online: 7 July 2018