Investigation of interface traps at Si/SiO2 interface of SOI pMOSFETs induced by Fowler–Nordheim tunneling stress using the DCIV method
Crossref DOI link: https://doi.org/10.1007/s00339-018-2011-9
Published Online: 2018-08-10
Published Print: 2018-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Li, Xiaojing
Zeng, Chuanbin
Wang, Ruiheng
Gao, Linchun
Yan, Weiwei
Luo, Jiajun
Han, Zhengsheng
Text and Data Mining valid from 2018-08-10
Article History
Received: 25 March 2018
Accepted: 3 August 2018
First Online: 10 August 2018