Publisher Correction to: Effect of strain modification on crystallinity and luminescence of InGaN/GaN multiple quantum wells grown by MOCVD
Crossref DOI link: https://doi.org/10.1007/s00339-018-2103-6
Published Online: 2018-09-11
Published Print: 2018-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yao, Shun http://orcid.org/0000-0002-3808-0048
Lan, Tian
Zhou, Guangzheng
Li, Ying
Lang, Luguang
Yu, Hongyan
Lv, Zhaochen
Wang, Zhiyong
Text and Data Mining valid from 2018-09-11
Article History
First Online: 11 September 2018