Source/Gate Material-Engineered Double Gate TFET for improved RF and linearity performance: a numerical simulation
Crossref DOI link: https://doi.org/10.1007/s00339-018-2158-4
Published Online: 2018-10-08
Published Print: 2018-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Shekhar, Skanda
Madan, Jaya
Chaujar, Rishu http://orcid.org/0000-0002-0161-8449
Text and Data Mining valid from 2018-10-08
Article History
Received: 14 June 2018
Accepted: 4 October 2018
First Online: 8 October 2018