A novel methodology to suppress ambipolarity and improve the electronic characteristics of polarity-based electrically doped tunnel FET
Crossref DOI link: https://doi.org/10.1007/s00339-019-2378-2
Published Online: 2019-01-08
Published Print: 2019-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chandan, Bandi Venkata
Nigam, Kaushal
Sharma, Dheeraj
Tikkiwal, Vinay Anand
Text and Data Mining valid from 2019-01-08
Article History
Received: 21 October 2018
Accepted: 2 January 2019
First Online: 8 January 2019