Photoemission study of HfO2 films deposited on GaN/Al2O3
Crossref DOI link: https://doi.org/10.1007/s00339-019-2824-1
Published Online: 2019-07-18
Published Print: 2019-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Liu, Zhengyuan
Luo, Bingcheng https://orcid.org/0000-0001-8615-3849
Text and Data Mining valid from 2019-07-18
Version of Record valid from 2019-07-18
Article History
Received: 18 April 2019
Accepted: 14 July 2019
First Online: 18 July 2019