Post-deposition annealing effect on the structural, morphological, and photoluminescence properties of β-Ga2O3 nanowires deposited on silicon by glancing angle deposition
Crossref DOI link: https://doi.org/10.1007/s00339-019-3075-x
Published Online: 2019-11-04
Published Print: 2019-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Meitei, Shagolsem Romeo
Singh, Naorem Khelchand
Text and Data Mining valid from 2019-11-01
Version of Record valid from 2019-11-01
Article History
Received: 30 July 2019
Accepted: 12 October 2019
First Online: 4 November 2019