Integration of ferroelectric BIT and dielectric HfO2 on silicon substrate with high data retention and endurance for ferroelectric FET applications
Crossref DOI link: https://doi.org/10.1007/s00339-019-3091-x
Published Online: 2019-11-02
Published Print: 2019-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Jha, Rajesh Kumar
Singh, Prashant http://orcid.org/0000-0002-4846-554X
Goswami, Manish
Singh, B. R.
Text and Data Mining valid from 2019-11-01
Version of Record valid from 2019-11-01
Article History
Received: 17 August 2019
Accepted: 19 October 2019
First Online: 2 November 2019