Fabrication and characterization of metal-ferroelectric-semiconductor non-volatile memory using BaTiO3 film prepared through sol–gel process
Crossref DOI link: https://doi.org/10.1007/s00339-019-3192-6
Published Online: 2019-12-14
Published Print: 2020-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Debnath, Ajit http://orcid.org/0000-0003-2300-8569
Srivastava, Vibhu
Sunny,
Singh, Sanjai
Text and Data Mining valid from 2019-12-14
Version of Record valid from 2019-12-14
Article History
Received: 27 May 2019
Accepted: 28 November 2019
First Online: 14 December 2019