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Metal gate electrode, channel and gate oxide engineering to improve DC and analog/RF performance of double-gate MOSFET for high-speed applications

Crossref DOI link: https://doi.org/10.1007/s00339-020-03576-5

Published Online: 2020-05-08

Published Print: 2020-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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