Comparison of electrical and interfacial characteristics between atomic-layer-deposited AlN and AlGaN on a GaN substrate
Crossref DOI link: https://doi.org/10.1007/s00339-020-03645-9
Published Online: 2020-05-25
Published Print: 2020-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Hogyoung
Yun, Hee Ju
Choi, Seok
Choi, Byung Joon
Funding for this research was provided by:
Ministry of Education (2017R1D1A1B03030400)
Text and Data Mining valid from 2020-05-25
Version of Record valid from 2020-05-25
Article History
Received: 12 August 2019
Accepted: 17 May 2020
First Online: 25 May 2020