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Hafnium based high-k dielectric gate-stacked (GS) gate material engineered (GME) junctionless nanotube MOSFET for digital applications

Crossref DOI link: https://doi.org/10.1007/s00339-020-04217-7

Published Online: 2021-01-03

Published Print: 2021-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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