Single-event transient characteristics of vertical gate-all-around junctionless field-effect transistor on bulk substrate
Crossref DOI link: https://doi.org/10.1007/s00339-020-04250-6
Published Online: 2021-01-07
Published Print: 2021-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yoon, Young Jun https://orcid.org/0000-0001-8755-5057
Lee, Jae Sang
Kang, In Man
Kim, Dong-Seok
Text and Data Mining valid from 2021-01-07
Version of Record valid from 2021-01-07
Article History
Received: 19 November 2020
Accepted: 23 December 2020
First Online: 7 January 2021
Compliance with ethical standards
:
: The authors declare that they have no conflict of interests.