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Measurement of ionization rate of charge carriers and breakdown characteristics of CVD-grown 4H-SiC diodes under steady magnetic field

Published Online: 2020-01-25

Published Print: 2020-02

Authors

Mukherjee, P.

Hossain, S. K. R.

Acharyya, A.

Biswas, A.
Funding

Funding for this research was provided by:

Science and Engineering Research Board (ECR/2017/000024/ES)
License Information

Text and Data Mining valid from 2020-01-25

Version of Record valid from 2020-01-25
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Article History

Received: 22 September 2019

Accepted: 10 January 2020

First Online: 25 January 2020

Document is current