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Mechanism study of SiO2 layer formation and separation at the Si die sidewall during nanosecond laser dicing of ultrathin Si wafers with Cu backside layer

Crossref DOI link: https://doi.org/10.1007/s00339-020-3322-1

Published Online: 2020-01-30

Published Print: 2020-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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