AlGaN-based ternary nitride memristors
Crossref DOI link: https://doi.org/10.1007/s00339-021-04819-9
Published Online: 2021-08-10
Published Print: 2021-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Choi, Seok
Lee, Ha Young
Yun, Hee Ju
Choi, Byung Joon https://orcid.org/0000-0003-1920-8162
Funding for this research was provided by:
ministry of trade, industry and energy (10080625)
national research foundation of korea (NRF-2020R1F1A1076232)
Text and Data Mining valid from 2021-08-10
Version of Record valid from 2021-08-10
Article History
Received: 11 June 2021
Accepted: 3 August 2021
First Online: 10 August 2021