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Plasma-based nanoarchitectonics for vertically aligned dual-metal carbon nanotube field-effect transistor (VA-DMCNFET) device: effect of plasma parameters on transistor properties

Crossref DOI link: https://doi.org/10.1007/s00339-021-05096-2

Published Online: 2021-12-10

Published Print: 2022-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Kansal, Mansha

Sharma, Suresh C. https://orcid.org/0000-0003-2170-195X
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Text and Data Mining valid from 2021-12-10

Version of Record valid from 2021-12-10
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Article History

Received: 4 October 2021

Accepted: 8 November 2021

First Online: 10 December 2021

Declarations

:

: The authors declare that they have no conflict of interest.

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