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High-speed SOI junctionless transistor based on hybrid heterostructure of Si/Si0.5Ge0.5 and asymmetric spacers with outstanding analog/RF parameters

Crossref DOI link: https://doi.org/10.1007/s00339-021-05153-w

Published Online: 2021-12-16

Published Print: 2022-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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