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Multilevel resistive switching in graphene oxide-multiferroic thin-film-based bilayer RRAM device by interfacial oxygen vacancy engineering

Crossref DOI link: https://doi.org/10.1007/s00339-021-05243-9

Published Online: 2022-02-18

Published Print: 2022-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Jena, Anjan Kumar https://orcid.org/0000-0001-8630-8759
Sahu, Mousam Charan https://orcid.org/0000-0002-1080-4091
Sahoo, Sandhyarani https://orcid.org/0000-0002-9842-2281
Mallik, Sameer Kumar https://orcid.org/0000-0001-5819-730X
Pradhan, Gopal K. https://orcid.org/0000-0002-1956-7248
Mohanty, J. https://orcid.org/0000-0001-9579-754X
Sahoo, Satyaprakash https://orcid.org/0000-0001-9766-3713
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Text and Data Mining valid from 2022-02-18

Version of Record valid from 2022-02-18
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Article History

Received: 25 October 2021

Accepted: 28 December 2021

First Online: 18 February 2022

Declarations

:

: The manuscript is prepared as per the ethical standard of the journal.