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Annealing temperature induced variation on the electrical and photoelectrical characteristics of Al/Feq3/p-Si/Al heterojunction diode

Published Online: 2024-10-11

Published Print: 2024-11

Authors

Zedan, I. T. https://orcid.org/0000-0003-2604-1938
El-Khalawany, L. M.

El-Menyawy, E. M.
Funding

Funding for this research was provided by:

National Center for Inter-University Research Facilities, Seoul National University (13040119)
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Article History

Received: 19 June 2024

Accepted: 10 September 2024

First Online: 11 October 2024

Declarations

:

: The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

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