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Numerical study of binding energies and optical responses of a symmetric modulation-doped GaN/In0.2Ga0.8N/GaN single quantum well: the role of electric field and donor impurity

Crossref DOI link: https://doi.org/10.1007/s00339-025-08879-z

Published Online: 2025-09-01

Published Print: 2025-09

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