Document is current

Article History

Received: 8 August 2025

Accepted: 18 December 2025

First Online: 8 January 2026

Declarations

:

: All co-authors approved the final version of the manuscript.

: The manuscript was not published before and is not submitted to another journal.

: Not applicable.

: The authors declare absence of conflicts of interest and competing interests.

: The highly anisotropic HTSC thin films are usually grown with the c axis normal to the surface of the substrate, providing good electrical transport along the substrate surface, but limiting out-of-plane integration. Fabrication of thin films with the c axis close to the substrate plane - the high-tilt films - mitigates this problem, and allows demonstration of complex physical phenomena, including scalable intrinsic Josephson stacks for THz applications. The graphoepitaxial seeding at substrate tilt angles close to ~ 18.43º provides a new possibility of fabrication of high-tilt YBCO films. We performed the structural studies of the high-tilt YBCO films using XRD techniques in asymmetric geometry. The effects of growth mechanism and deposition rate are observed and discussed.