Novel in-line WAT processing of 55 nm CIS product and effect of process waiting time on void growth at interface of SiCN with copper capping layer
Crossref DOI link: https://doi.org/10.1007/s00542-015-2503-x
Published Online: 2015-03-28
Published Print: 2016-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lou, Hsiao Chi
Chen, Hung Lin
Zhang, David Wei
Text and Data Mining valid from 2015-03-28
