Oxide bound impact on hot-carrier degradation for gate electrode workfunction engineered (GEWE) silicon nanowire MOSFET
Crossref DOI link: https://doi.org/10.1007/s00542-015-2557-9
Published Online: 2015-05-07
Published Print: 2016-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Gupta, Neha
Kumar, Ajay
Chaujar, Rishu
Text and Data Mining valid from 2015-05-07