Study and design of resistive switching behaviors in PMMA-based conducting-bridge random-access memory (CBRAM) devices
Crossref DOI link: https://doi.org/10.1007/s00542-015-2754-6
Published Online: 2015-12-26
Published Print: 2017-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Jian, Jiaying http://orcid.org/0000-0002-4369-2022
Chang, Honglong
Vena, Arnaud
Sorli, Brice
Funding for this research was provided by:
National Natural Science Foundation of China (No.51301133)
Scientific Research Program Funded by Shaanxi Provincial Education Department (2013JK0907)
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