Properties of ScxAl1-xN (x = 0.27) thin films on sapphire and silicon substrates upon high temperature loading
Crossref DOI link: https://doi.org/10.1007/s00542-015-2798-7
Published Online: 2015-12-30
Published Print: 2016-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Mayrhofer, P. M.
Persson, P. O. Å.
Bittner, A.
Schmid, U.
Funding for this research was provided by:
Austrian Science Fund (AT) (P 25212-N30)
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